A09t Mosfet

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ao3400 a09t 5.7a 30v n-channel mosfet smd transistor sot-23

Ao3400 a09t 5.7a 30v n-channel mosfet smd transistor sot-23. If you have some question pls contact customer service. It Is The Wonderful Birthday/New Year/Festival Present, a removable 3/8 inch barbed check valve, Buy Caroline's Treasures BB7615PILLOWCASE Welcome Friends Black Poodle Fabric Standard Pillowcase. Hg630 v2 firmware.

Home Components Transistor/Mosfet AO3400 SOT23 AO3400A SOT-23 A09T MOSFET transistor-20%. Components, Transistor/Mosfet AO3400 SOT23 AO3400A SOT-23 A09T MOSFET transistor. Availability: 63 in stock (can be backordered) Add to Wishlist Compare. 63 in stock (can be backordered) Quantity. Add to Wishlist.
In this video I demonstrate how to test a MOSFET transistor with a digital fluke multimeter in the off state and the on state. This transistor came out of a.
AO3400 / A09T Field Effect DIY SOT-23 C MOSFET N-Channel quantity. SKU: 1096 Categories: MOSFET, MOSFET SMD. Related products.

ao3400 a09t 5.7a 30v n-channel mosfet smd transistor sot-23. Transistor Type:N-Channel MOSFET. Condition:： New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. See all condition definitions ： Model: ： AO3400 A09T ， Modified Item: ： No： MPN: ： Does Not Apply ， Country/Region of Manufacture: ： China： Brand: ： CX ， Custom Bundle: ： No： Transistor Type: ： N-Channel Depletion Mode MOSFET ，。

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ao3400 a09t 5.7a 30v n-channel mosfet smd transistor sot-23

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ao3400 a09t 5.7a 30v n-channel mosfet smd transistor sot-23

Transistor Type:N-Channel MOSFET, Online promotion find your best offer here Guarantee Pay secure 100% Authentic Online shopping provides you with exquisite goods.
ao3400 a09t 5.7a 30v n-channel mosfet smd transistor sot-23

Type Designator: IRF9530 Adobe acrobat 7 serial key.

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

A09t Mosfet Pdf

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38 nC

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO220AB Five nights at freddys universe mod 1.12 2.

IRF9530 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF9530 Datasheet (PDF)

0.1. irf9530spbf.pdf Size:1028K _international_rectifier

PD- 95988IRF9530SPbF Lead-Free06/06/05Document Number: 91077 www.vishay.com1IRF9530SPbFDocument Number: 91077 www.vishay.com2IRF9530SPbFDocument Number: 91077 www.vishay.com3IRF9530SPbFDocument Number: 91077 www.vishay.com4IRF9530SPbFDocument Number: 91077 www.vishay.com5IRF9530SPbFDocument Number: 91077 www.vishay.com6IRF9530SPbFPeak Diode R

0.2. irf9530-31-32-33.pdf Size:449K _international_rectifier

0.3. irf9530n.pdf Size:113K _international_rectifier

PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

0.4. irf9530npbf.pdf Size:225K _international_rectifier

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

0.5. irf9530nspbf.pdf Size:761K _international_rectifier

PD- 95439IRF9530NSPbFIRF9530NLPbF Lead-Freewww.irf.com 104/26/05IRF9530NS/LPbF2 www.irf.comIRF9530NS/LPbFwww.irf.com 3IRF9530NS/LPbF4 www.irf.comIRF9530NS/LPbFwww.irf.com 5IRF9530NS/LPbF6 www.irf.comIRF9530NS/LPbFwww.irf.com 7IRF9530NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS

0.6. irf9530s.pdf Size:176K _international_rectifier

0.7. irf9530.pdf Size:173K _international_rectifier

0.8. irf9530ns.pdf Size:173K _international_rectifier

PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

0.9. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung

0.10. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung

0.11. irf9530pbf sihf9530.pdf Size:203K _vishay

IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir

0.12. irf9530s sihf9530s.pdf Size:171K _vishay

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

0.13. irf9530spbf sihf9530s.pdf Size:196K _vishay

0.14. irf9530s.pdf Size:170K _vishay

0.15. irf9530 sihf9530.pdf Size:202K _vishay

0.16. irf9530 rf1s9530sm.pdf Size:68K _intersil

IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the

0.17. irf9530-220m.pdf Size:520K _semelab

4.83 (0.190)10.92 (0.430)5.33 (0.210)10.41 (0.410)0.64 (0.025)0.89 (0.035)3.56 (0.140)Dia3.81 (0.150)1 2 30.89 (0.035)Dia.1.27 (0.050)2.54 (0.100) 3.05 (0.120)BSC BSCTO220M (TO-257AB) Pin 1 - Gate Pin 2 - Drain Pin 3 - Source 13.21 (0.52)13.72 (0.54)13.21 (0.52)13

0.18. irf9530smd.pdf Size:22K _semelab

IRF9530SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS -100VID(cont) -8ARDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

0.19. irf9530.pdf Size:1236K _kexin

DIP Type MOSFETP-Channel MOSFETIRF9530 (KRF9530)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) =-100V ID =-13 A (VGS =-10V) RDS(ON) 205m (VGS =-10V)1.27 0.10 1.52 0.102 RDS(ON) 300m (VGS =-4.5V) 1 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.2

0.20. irf9530n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530NFEATURESStatic drain-source on-resistance:RDS(on)0.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia

0.21. irf9530pbf.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9530PBFFEATURESStatic drain-source on-resistance:RDS(on)0.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower management in notebook computerPortable equipment and battery powered systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

A09t Mosfet

0.22. irf9530s.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530SFEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe

0.23. irf9530.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530FEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe

Datasheet: IRF9513, IRF9520, IRF9520N, IRF9520NL, IRF9520NS, IRF9521, IRF9522, IRF9523, APT50M38JFLL, IRF9530N, APT5015BLC, IRF9530NL, IRF9530NS, IRF9531, IRF9532, IRF9533, IRF9540.

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