Maximize power density and reliability with our portfolio of GaN power devices for every power level

MOSFET GAN FET 650V 36A TO247 Enlarge Mfr. Part # TP65H050WSQA. Mouser Part # 227-TP65H050WSQA. Transphorm: MOSFET GAN FET 650V 36A TO247. A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. A heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).

Our family of gallium nitride (GaN)FETs with integrated gate drivers and GaN power devices offer the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors can switch much faster than silicon MOSFETs which offers the potential to achieve lower switching losses. Our GaN transistors are being adopted for a wide range of applications from telecommunications, servers, motor drives, laptop adapters and on-board chargers for electric vehicles.

Revolutionizing the power engineering world

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GaN’s inherent lower gate and output capacitance enables a MHz switching frequency operation which reduces gate and switching losses to increase efficiency.

Twice the speed, half the losses

GaN’s integrated driver enables switching speeds of >150 V/ns, resulting in half the losses compared to discrete GaN FETs. This, combined with our low-inductance package, delivers clean switching and minimal ringing in every power application.

Lifetime reliability

TI GaN-on-silicon process utilizes our 100% internal manufacturing facilities for fabrication, assembly and test, thus leveraging internally-owned capacity and maximized product quality.

Power management is at the center of enabling the continued integration of electronics in our lives. For decades, TI has been at the forefront of developing new process, packaging and circuit-design technologies to deliver the best power devices for your design. Check out our featured GaN devices below, designed to help you address power density.

GaN FETs with integrated driver & protection for power density

GaN FETs have inherently superior performance over traditional silicon FETs, which is enabling engineers to push the boundary in power designs and reach new levels of power density and efficiency. From consumer applications such as AC/DC power supplies all the way up to multi-kW, three-phase converters – GaN is reducing the weight, size and cost of these power designs while also reducing energy consumption. GaN’s high-speed switching is changing the way power systems look today, enabling market trends such as ultra-thin power supplies, motor drive integrated robotics and achieving >200% more power density in next-generation datacenters and 5G rectifiers.

LMG3410R070

600-V 70-mΩ GaN with integrated driver and protection

LMG3422R050

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

LMG3422R030

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Featured gallium nitride (GaN) reference designs

98.7%-efficient 1 MHz CrM GaN PFC reference design

This PFC design offers 270W/in^3 power density and 98.7% peak efficiency while switching at 1 MHz. The 2-stage interleaved 1.6 kW design is ideal for many space constrained applications such as server, telecom and industrial power supplies.

Gan Fet Manufacturers

48V/10A 3-phase GaN inverter design for high-speed motor drive

This design enables low voltage, 100-kHz drives and low inductance brushless motors to minimize losses, torque ripple in the motor and achieve efficiency of 98.5%.

200V AC three-phase GaN inverter design for servo drive

This 98%-efficient design for driving 200-V AC servo motors up to 2 kW, enables low-inductance motor drive with minimum current ripple for fine position controlled applications.

Automotive GaN

TI’s new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions, offering electric vehicles an extended battery range with increased system reliability at a lower design cost.

Our GaN FETs feature:

• A fast switching, 2.2-MHz integrated gate driver
• Twice the power density to achieve 99% efficiency
• A 59% reduction in the size of power magnetics compared to existing solutions

View the LMG3522R030-Q1 to learn more.

The most efficient & reliable GaN

TI's integrated approach to GaN offers ease of design with a compact single-chip solution, high efficiency as a result of optimized gate drive layout and high reliability with integrated overcurrent protection and 40 million hours of device reliability hours. With devices from 150-mΩ to 30-mΩ, we have a GaN solution for every application.